MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSR80N08


MOSFET N Trench 80V 80A (Tc) 4V @ 250uA 9.5 mΩ @ 40A,10V TO-220 (TO-220-3) RoHS
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Winsok 50
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AUD 0.6873
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FQP33N10-VB


100V 55A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.6512
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FDMA3028N-VB


30V 5A 2 N-Channel DFN-6(2x2) MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.6643
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BSZ050N03LS G-HXY


30V 100A 4m@10V,30A 62.5W 2.5V@250uA 1PCSNChannel DFN-8L(3x3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 1
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AUD 0.669
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SUD50N04-8M8P


40V 85A 5mO@10V,85A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.676
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AM4492N


100V 5.5A 40mO@10V,5A 3.1W N Channel SO-8 MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.6778
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SQ2364EES-T1_GE3


MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
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Vishay 1
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AUD 0.6956
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2 A60 V240 mOhmsN - Channel 460 mV- 55 C+ 175 C3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V2.5 nCEnhancement  
IRFI3205PBF-VB


60V 70A 10m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 0.699
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TPA60R330M


600V 11A 290mO@10V,5.5A 31W N Channel TO-220F-3 MOSFETs ROHS
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UNIGROUP 1
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AUD 0.7034
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HY030N06P


TO-220FB-3L MOSFETs ROHS
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HuaYi 0
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AUD 0.6671
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