MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRF2907Z-VB


80V 195A 2.8m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.8255
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IRFI720GPBF


MOSFET N-Chan 400V 2.6 Amp
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Vishay 2
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AUD 1.7567
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTube       
IPP65R225C7-VB


650V 15A 220m@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.7703
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STP18N60M2-VB


650V 18A 0.23@10V,8A 180W 2V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.7703
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SISH101DN-T1-GE3


MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
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Vishay 2
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AUD 1.7774
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35 A30 V7.2 mOhmsP - Channel 2.5 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8SH - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V102 nCEnhancement TrenchFET; PowerPAK
FDB2552-NL-VB


150V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.841
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SUM85N15-19-E3-VB


150V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.841
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VBGM11505


TO-220 MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.841
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IRFP26N60LPBF


N-Channel 600 V 26A (Tc) 470W (Tc) Through Hole TO-247AC
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Vishay 2
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AUD 1.8749
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   N - Channel  - 55 C+ 150 C Through HoleTO - 247ACTubeSi      
IXTA4N65X2


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 2
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AUD 1.8806
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4 A650 V850 mOhmsN - Channel 3 V- 55 C+ 150 C80 WSmd/SmtTO - 263 - 3TubeSi 30 V8.3 nCEnhancement Hiperfet
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