MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RS85N150T


TO-220 MOSFETs ROHS
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REASUNOS 3
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AUD 0.9921
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WMK119N12HG4


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 2
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AUD 0.9737
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WFF12N65-VB


650V 12A 680mΩ@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 2
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AUD 0.9762
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N10L16-VB TO220


100V 100A 9m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 2
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AUD 0.9847
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DMP3011SFVWQ-7


MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
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Diodes Incorporated 2
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AUD 0.9901
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IPD60R600P7S E8228


Infineon CONSUMER
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Infineon 2
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AUD 0.993
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AUIRFR5410TRR-VB


100V 16A 100m@10V 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.0095
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SP010N03AGHTQ


100V 180A 3.1m 1 N-Channel TO-220-3L MOSFETs ROHS
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Siliup 2
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AUD 1.0191
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AUIRF3710ZSTRR-VB


100V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 2
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AUD 1.0171
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IPD25DP06LMATMA1


MOSFET TRENCH 40<-<100V
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Infineon 1
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AUD 1.0069
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6.5 A60 V250 mOhmsP - Channel - 1 V- 55 C+ 175 C28 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V- 13.8 nCEnhancement  
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