MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK2782


TO-252 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.4648
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VBZE70N03


30V 110A 4.5mO@10V,110A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.4787
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615N-VB


60V 7A 40m@10V,7A 2 N-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.486
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IRF7241TRPBF-VB


40V 16.1A 1PCSPChannel SO-8 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.4896
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DMN1006UCA6-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 3
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AUD 0.4909
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16.6 A12 V5 mOhms , 5 mOhmsN - Channel 500 mV- 55 C+ 150 C2.4 WSmd/SmtX3 - DSN2718 - 6Cut TapeSi2 Channel12 V35.2 nC , 35.2 nCEnhancement  
MDS3604URH


30V 13.5A 11.2mΩ@10V,10A 5W 2.5V@250uA 390pF@15V P Channel 2.55nF@15V 29.5nC@4.5V -55℃~+150℃@(Tj) SO-8 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.4951
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IRF9388TRPBF-VB


30V 13.5A 11m@10V,13.5A 1PCSPChannel SO-8 MOSFETs ROHS
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VBsemi Elec 3
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AUD 0.5059
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DMG7408SFG-7


Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K
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Diodes Incorporated 3
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AUD 0.517
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7 A30 V15 mOhmsN - Channel 1 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8-Si1 Channel20 V17 nCEnhancement  
SWHA069R10VS


100V 60A 7mΩ DFN(5x6) MOSFETs ROHS
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Sam&wing 3
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AUD 0.5203
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UF840KG-TN3-R


MOSFET N Trench 500V 8A (Tc) 4V @ 250uA 870 mΩ @ 4.4A,10V TO-252-2 (DPAK) RoHS
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Unisonic 3
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AUD 0.5323
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