MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IV2Q12080D7Z


TO-263-7 MOSFETs ROHS
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InventChip 4
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AUD 13.4468
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TK62Z60X,S1F


MOSFET TO-247-4L PD=400W 1MHz PWR MOSFET TRNS
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Toshiba 4
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AUD 13.791
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61.8 A600 V40 mOhmsN - Channel 3.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 4TubeSi1 Channel30 V135 nCEnhancement Dtmosiv - H
SiHG026N60EF-VB


600V 87A 26m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 4
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AUD 13.9173
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IXTT10P60


MOSFET -10 Amps -600V 1 Rds
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IXYS 4
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AUD 14.9731
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10 A600 V1 Ohmsp - channel     smd/smtTO - 268 - 3Tubesi      
IXFJ20N85X


MOSFET 850V/9.5A Ultra Junction X-Class HiPerFET Power MOSFET, ISO TO-247
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IXYS 4
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AUD 17.4687
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9.5 A850 V360 mOhmsN - Channel 3.5 V- 55 C+ 150 C110 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V63 nCEnhancement Hiperfet
IPDD60R045CFD7XTMA1


N-Channel 600V 61A (Tc) 379W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 4
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AUD 21.2899
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61 A600 V45 mOhmsN - Channel 4.5 V- 55 C+ 150 C379 WSMD/SMTHDSOP - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V79 nCEnhancement  
S2M0040120K-1


TO-247-4 SiC MOSFETs ROHS
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SMC Diode 4
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AUD 22.4013
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MS170N25HGF4


250V 170A SOT-227 MOSFETs ROHS
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MASPOWER 4
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AUD 26.5354
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IXTT60N20L2


MOSFET LINEAR L2 SERIES MOSFET 200V 60A
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IXYS 4
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AUD 26.6955
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60 A200 V45 mOhmsn - channel 4.5 V- 55 C+ 150 C540 Wsmd/smtTO - 268 - 3Tubesi1 channel20 V255 nCenhancement linear l2
IPDQ60R010S7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 4
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AUD 27.0239
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