MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHF22N60E-GE3


Vishay Semiconductors MOSFET 600V 180mOhms10V 21A N-Ch E-SRS
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Vishay 4
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AUD 4.7838
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21 A600 V180 mOhmsN - Channel20 V4 V- 55 C+ 150 C35 WThrough HoleTO - 220 - 3BulkSi1 Channel30 V86 nCEnhancement E Series
STW43N60DM2-VB


600V 31A 90m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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AUD 4.8648
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VBL16R31SFD


600V 31A 90m@10V 4.5V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 4.8648
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VBP16R31SFD


600V 31A 90m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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AUIRFB8405


Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
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Infineon 4
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AUD 4.9552
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120 A40 V2.5 mOhmsN - Channel20 V2.2 V To 3.9 V- 55 C+ 175 C163 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V107 nCEnhancementAec - Q101Coolirfet
VBP16R32S


600V 32A 85m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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AUD 4.775
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IXTQ30N60P-VB


600V 13A 208W 0.19@10V,11A 4V@250uA TO-3P MOSFETs ROHS
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AUD 5.1002
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TSM80N950CP ROG


MOSFET 800V Power MOSFET Superjunction N-chan
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Taiwan Semiconductor 4
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AUD 5.1154
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6 A800 V800 mOhmsN - Channel 2 V- 55 C+ 150 C110 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V19.6 nCEnhancement  
AOB095A60L-VB


600V 34A 80m@10V 4.5V 1 N-Channel TO-263 MOSFETs ROHS
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VBsemi Elec 4
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AUD 4.8648
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IPB60R090CFD7-VB


600V 31A 90m@10V 4.5V 1 N-Channel TO-263 MOSFETs ROHS
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AUD 4.8648
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