MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
12P10L-TM3-T-VB


100V 1PCSPChannel TO-251 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 4
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AUD 0.41
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AO4433-VB


30V 9A 18m@10V,9A 1PCSPChannel SO-8 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4121
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PHT6N06T-VB


60V 4A 76m@10V 1PCSNChannel SOT-223-3 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4197
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P45NF06-VB


60V 50A 24m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4215
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20N06L-VB TO252


TO-252 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4215
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2SK3377-Z-E1-AZ-VB


60V 45A 3W 0.025@10V,15A 1V@250uA TO-252 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4215
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STP70NS04ZC-VB


30V 70A 71W 0.007@10V,20A 2.5V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4215
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FDS8812NZ


30V 18A 4mO@10V,18A N Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.437
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SI4963DY-T1-E3-VB


SO-8 MOSFETs ROHS
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VBsemi Elec 4
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AUD 0.4433
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BSZ086P03NS3 G


MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 4
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AUD 0.4449
Multiples of: 1

40 A30 V6.5 mOhmsN - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V57.5 nCEnhancement Optimos
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