MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TF472-VB


100V 6A 0.0085@10V,30A 56W 1V@250uA TO-220F MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.1558
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SM420R65CT2TL


MOSFET TO-220F-3L RoHS
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SPS 5
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AUD 1.1739
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2SJ280S-VB


60V 80A 21m@10V,80A 1PCSPChannel TO-263 MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.2446
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FS3607-VB


80V 120A 6m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.2482
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UTT50P06-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.1993
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RU7570L-VB


80V 75A 5m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.3016
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STP8NK80ZFP-VB


800V 5A 190W 1.2@10V,3.7A 4V@250uA TO-220F MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.3325
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TSF16N50M-VB


550V 11A 0.26@10V,10A 60W 4V@250uA TO-220F MOSFETs ROHS
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VBsemi Elec 5
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AUD 1.3325
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NVMJS2D5N06CLTWG


MOSFET N-Channel 60V 164A 8-Pin LFPAK T/R
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ON Semiconductor 5
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AUD 1.3693
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31 A60 V2.4 mOhmsN - Channel 2 V- 55 C+ 175 C113 WSmd/SmtLFPAK - 8Cut TapeSi1 Channel20 V52 nCEnhancementAec - Q101 
HY3712B


MOSFET N Trench 125V 170A (Tc) 4V @ 250uA 7.5 mΩ @ 85A,10V TO-263-2L RoHS
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HUAYI 5
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AUD 1.3736
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