MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF7N60-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 6
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AUD 0.9762
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AO4449


P-Channel 30 V 7A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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Alpha & Omega 6
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AUD 1.002
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NVMFD027N10MCL-VB


100V 18m@10V;36A 2 N-Channel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 6
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AUD 1.0127
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NTB6410ANG-VB


100V 100A 10m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 6
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AUD 1.0171
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NCEP050N12D


TO-263 MOSFETs ROHS
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NCE Power 6
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AUD 1.0494
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SI7850DP-T1-GE3-HXY


60V 30A 20m 1PCSNChannel DFN-8L(5x6) MOSFETs ROHS
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HXY MOS 6
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AUD 1.051
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HFS13N60U-VB


650V 12A 680m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 6
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AUD 1.0552
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CEP85N75-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 6
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AUD 1.0715
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IRF2807PBF-VB


80V 100A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 6
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AUD 1.0715
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IPG20N10S4L-22


Infineon Technologies MOSFET MOSFET
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Infineon 6
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AUD 1.0736
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20 A , 20 A100 v , 100 V20 mOhms , 20 mOhmsN - Channel 1.6 V- 55 C+ 175 C60 WSmd/SmtTDSON - 8Reel-1 Channel+/- 16 V21 nCEnhancementAec - Q101 
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