MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS7650DC-VB


30V 1.5m@10V 1.2V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 14
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AUD 1.5106
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VBMB165R20


MOSFET N Channel 650V 20A 5V @ 250uA TO220F RoHS
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VBsemi Elec 14
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AUD 1.4318
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STD180N4F6


MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 14
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AUD 1.5876
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80 A40 V2.5 mOhmsN - Channel 3 V- 55 C+ 175 C130 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V130 nCEnhancement Stripfet
IRF7580MTRPBF


Transistor: N-MOSFET; unipolar; 60V; 116A; 115W; DirectFET
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Infineon 14
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AUD 1.5922
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116 A60 V3.5 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C115 WSmd/SmtDirectfet - 10 MEReelSi1 Channel20 V120 nC  Strongirfet
IPB144N12N3 G


MOSFET N-Channel 120V MOSFET
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Infineon 14
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AUD 1.6582
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56 A120 V12.3 mOhmsN - Channel 2 V- 55 C+ 175 C107 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V49 nCEnhancement Optimos
CSD19531KCS-VB


100V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 14
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AUD 1.7582
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DMTH4011SPD-13


MOSFET MOSFET BVDSS 31V 40V
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Diodes Incorporated 14
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AUD 1.7884
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42 A40 V15 mOhmsN - Channel 2 V- 55 C+ 175 C37.5 WSMD/SMTPowerdi5060 - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V10.6 nCEnhancement  
STU6NF10


STMicroelectronics MOSFET N-Ch, 100V-0.22ohms 6A
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STMicroelectronics 14
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AUD 1.8481
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6 A100 V250 mOhmsN - Channel  - 65 C+ 175 C30 WThrough HoleIPAK - 3TubeSi1 Channel20 V Enhancement Stripfet
DMP3026SFDF-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 14
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AUD 0.4791
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8.6 A30 V15 mOhmsP - Channel 3 V- 55 C+ 150 C2 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel25 V19.6 nCEnhancement  
VBM1105


MOSFET N Channel 100V 120A 4V @ 250uA 5mO @ 120A,10V TO-220AB RoHS
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VBsemi Elec 8
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AUD 1.7038
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