MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMJS0D8N04CLTWG


MOSFET T6 40V LL LFPAK
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ON Semiconductor 15
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AUD 1.8552
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SIR470DP-T1-GE3-VB


40V 123A 1PCSNChannel QFN8(5X6) MOSFETs ROHS
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VBsemi Elec 15
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AUD 1.9468
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SQD70140EL_GE3


MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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Vishay 15
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AUD 2.0419
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30 A100 V12 mOhmsN - Channel 1.5 V- 55 C+ 175 C71 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V40 nCEnhancementAec - Q101Trenchfet
HY5110NA2W


100V 295A 2.4mΩ@10V,100A 500W 3V@250uA 638pF@50V N Channel 14.818nF@50V 286.5nC@10V +175℃@(Tj) TO-247A-3L MOSFETs ROHS
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HuaYi 15
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AUD 2.0645
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CSD87351ZQ5D


MOSFET Sync Buck NexFET Pwr Block
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Texas Instruments 15
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AUD 2.2881
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32 A30 V N - Channel 1 V , 750 mV- 55 C+ 150 C12 WSMD/SMTLSON - CLIP - 8Reel , Cut TapeSi2 Channel- 8 V , 8 V7.7 nC , 22 nCEnhancement NexFET
PSMN3R8-100BS-VB


100V 5m@10V 2V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 15
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AUD 2.2616
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IPB60R210CFD7ATMA1


MOSFET LOW POWER_NEW
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Infineon 15
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AUD 2.2817
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IRF644STRLPBF


Vishay Semiconductors MOSFET N-Chan 250V 14 Amp
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Vishay 15
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AUD 2.5776
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14 A250 V280 mOhmsN - Channel20 V - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
SI7434DP-T1-E3


MOSFET 250V 3.8A 5.2W 155mohm @ 10V
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Vishay 15
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AUD 2.7254
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
CSD19532KTT


Texas Instruments MOSFET CSD19532Q5B Pkg spin
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Texas Instruments 15
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AUD 3.1493
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200 A100 V5.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 3ReelSi1 Channel10 V44 nCEnhancement Nexfet
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