MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTA30N25L2


MOSFET DISC MOSFET N-CH LINEAR L2
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IXYS 16
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AUD 14.3493
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30 A250 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C355 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V130 nCEnhancement Linear L2
IXFH14N100Q2


MOSFET 14 Amps 1000V 0.90 Rds
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IXYS 16
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AUD 22.4158
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   N Channel      TO - 247 - 3Tube       
BSS138A-TP


MOSFET N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W
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Micro Commercial Components (MCC) 15
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AUD 0.0815
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0.22 A50 V3 OhmsN - Channel 0.8 V- 55 C+ 150 C0.35 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
BSV236SPH6327XT


MOSFET OptiMOS -P Small Signal Transistor
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Infineon 15
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AUD 0.1445
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1.5 A20 V131 mOhmsP - Channel 1.2 V- 55 C+ 150 C560 mWSmd/SmtSOT - 363ReelSi1 Channel12 V- 5.7 nCEnhancement  
PMCM4401UNEZ


MOSFET MOS Discretes WLCSP
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Nexperia 15
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AUD 0.1527
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5.4 A20 V43 mOhmsN - Channel 400 mV- 55 C+ 150 C1.3 WSmd/SmtWLCSP - 4 Si1 Channel8 V9 nCEnhancement  
AP4232BGM-HF-VB


30V 7.2A 0.016@10V,8A 2W 2.5V@250uA SOP-8 MOSFETs ROHS
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VBsemi Elec 15
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AUD 0.3266
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AOD4146-VB


30V 25.8A 0.005@10V,80A 3.75W 2.5V@250uA TO-252 MOSFETs ROHS
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VBsemi Elec 15
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AUD 0.3266
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IRF7326D2TRPBF-VB


30V 7.3A 2.5W 0.035@10V,6.3A 1V@250uA SOP-8 MOSFETs ROHS
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VBsemi Elec 15
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AUD 0.3266
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RU30D8HCGTR-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 15
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AUD 0.3266
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FW342-TL-E-VB


30V 8A 1PCSNChannel+1PCSPChannel SO-8 MOSFETs ROHS
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VBsemi Elec 15
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AUD 0.3456
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