MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
D-DMC1030UFDB-7


MOSFETs ROHS
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Diodes Incorporated 17
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AUD 0.3009
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K2018-01L-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3266
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VBZE20N03


30V 50A 11mO@10V,50A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3347
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NVD20N03L27T4G-VB


30V 50A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3456
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AO4803A-VB


30V 7.3A 29m@10V,7.3A 2 P-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.351
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DMN6040SSS-13


MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
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Diodes Incorporated 17
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AUD 0.3531
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5.5 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8Cut TapeSi1 Channel10 V22.4 nCEnhancement  
NTMD4840NR2G


SO-8 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3579
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NTD20N03HL-VB


30V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3579
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NTK3134NT1G


MOSFET 20V/6V N CH T1 890mA 0.3
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ON Semiconductor 17
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AUD 0.3719
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890 mA20 V350 mOhmsN - Channel 450 mV- 55 C+ 150 C550 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel4.5 V Enhancement  
Si4501BDY-T1-GE3-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 17
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AUD 0.3756
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