MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD16412Q5A


N-Channel 25 V 14A (Ta), 52A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 22
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AUD 1.2819
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60 A25 V13 mOhmsn - channel 2 V- 55 C+ 150 C3 Wsmd/smtQFN - 8Reelsi1 channel16 V2.9 nCenhancement nexfet
UF3205L-TA3-T-VB


60V 5m@10V 3.6V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0008
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NVMFD6H846NL-VB


100V 18m@10V;36A 2 N-Channel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0127
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SIA400EDJ-T1-GE3-VB


30V 1PCSNChannel QFN-6(2x2) MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0127
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LM5D50P10


DFN5x6-8L MOSFETs ROHS
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Leiditech 18
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AUD 1.0369
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HFS12N60S-VB


650V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0552
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STP9N60M2-VB


650V 12A 800m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0677
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CSD19538Q3AT


MOSFET 100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
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Texas Instruments 18
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AUD 1.0782
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4.9 A100 V58 mOhmsN - channel 3.2 V- 55 C+ 150 C2.8 WSmd/smtVSONP - 8ReelSi1_Channel20 V4.3 nCEnhancement Nexfet
IRF3710STRPBF-VB


100V 75A 20m@10V,75A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.0955
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FDW6923-VB


30V 5.2A 1.14W 0.036@10V,4.7A 1V@250uA TSSOP-8 MOSFETs ROHS
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VBsemi Elec 18
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AUD 1.1558
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