MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW15N95K5


Transistor: N-MOSFET; unipolar; 950V; 7.6A; 170W; TO247
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STMicroelectronics 20
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AUD 5.9307
Multiples of: 1

12 A950 V410 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V40 nCEnhancement SuperMESH
SIR800DP-T1-GE3


MOSFET 20V 50A N-CH MOSFET
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Vishay 20
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AUD 5.9817
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
WMJ90N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W
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Wayon 20
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AUD 13.2478
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            WMOS C4      
FDH45N50F_F133


Fairchild Semiconductor MOSFET 500V N Channel MOSFET FRFET
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ON Semiconductor 20
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AUD 13.6997
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45 A500 V120 mOhmsN - Channel      TO - 247 - 3Tube       
TK024N60Z1,S1F


MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6
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Toshiba 20
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AUD 16.5164
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80 A600 V24 mOhmsN - Channel 4 V + 150 C506 WThrough HoleTO - 247 - 3TubeSi1 Channel+ 30 V140 nCEnhancement  
IAUCN04S7N004ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 20
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AUD 18.3763
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518 A40 V550 uOhmsN - Channel 2.6 V- 55 C+ 175 C219 WSMD/SMTTDSON - 8Reel , Cut TapeSi - 20 V , + 20 V169 nCEnhancement  
APT10050B2VFRG


MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS
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Microchip 20
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AUD 39.2643
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            POWER MOS 5®      
IXFX300N20X3


MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm
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IXYS 20
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AUD 53.8896
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300 A200 V4 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 mWThrough HoleTO - 247 - PLUS - 3TubeSi1 Channel- 20 V , 20 V375 nCEnhancement HiPerFET
MS4N250HGC0


TO-247 MOSFETs ROHS
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MASPOWER 20
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AUD 58.7661
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PJM01N20KDC


DFN-3L(1x0.6) MOSFETs ROHS
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Pingjingsemi 19
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AUD 0.0145
Multiples of: 20

                   
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