MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTPF190N65S3H


MOSFET SUPERFET3 FAST 190MOHM TO-220F
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ON Semiconductor 21
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AUD 4.2358
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16 A650 V190 mOhmsN - Channel 4 V- 55 C+ 150 C32 WThrough HoleTO - 220 - 3 Si1 Channel- 30 V , + 30 V31 nCEnhancement  
IXTX110N20L2-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 21
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AUD 5.271
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ALD810020SCL


Advanced Linear Devices MOSFET Quad SAB MOSFET ARRAY VT=2.00V
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Advanced Linear Devices 21
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AUD 5.8462
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80 mA10.6 V16 GOhmsN - Channel10.6 V1.98 V0 C+ 70 C500 mWSmd/SmtSOIC - 16TubeSi4 Channel10.6 V Enhancement  
IPB024N10N5


MOSFETs TRENCH >=100V
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Infineon 21
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AUD 6.1312
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NTE2905


Transistor: P-MOSFET; 200V; 12A; TO247
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NTE 21
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AUD 6.5821
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SIHG068N60EF-GE3


N-Channel 600V 41A (Tc) 250W (Tc) Through Hole TO-247AC
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Vishay 21
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AUD 7.2519
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41 A600 V68 mOhmsN - Channel 5 V- 55 C+ 150 C250 WThrough Hole  Si1 Channel- 30 V , 30 V27 nCEnhancement  
BUK7S1R0-40H


MOSFET
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Nexperia 21
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AUD 7.7168
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IXFL38N100P


MOSFET 38 Amps 1000V 0.21 Rds
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IXYS 21
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AUD 25.9104
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29 A1 kV230 mOhmsN - Channel  - 55 C+ 150 C520 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXFL44N100P


MOSFET 44 Amps 1000V 0.22 Rds
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IXYS 21
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AUD 26.5791
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22 A1 kV240 mOhmsN - Channel  - 55 C+ 150 C357 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXFK32N80Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
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IXYS 21
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AUD 27.7284
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32 A800 V270 mOhmsN - Channel   + 150 C1 kWThrough HoleTO - 264 - 3TubeSi1 Channel30 V140 nC  Hiperfet
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