MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STH60N10-VB


TO-247AC MOSFETs ROHS
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VBsemi Elec 22
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AUD 3.3166
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IXFP7N80P


MOSFET 7 Amps 800V 1.44 Rds
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IXYS 22
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AUD 3.6985
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7 A800 V1.44 OhmsN - Channel 5 V- 55 C+ 150 C200 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V32 nCEnhancement Polar, Hiperfet
IPA80R460CE


MOSFET CONSUMER
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Infineon 22
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AUD 4.0446
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MOT5122T


120V 260A 2m@10V,50A 300W 4V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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MOT 22
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AUD 4.0806
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IPB60R180C7


MOSFET HIGH POWER_NEW
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Infineon 22
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AUD 4.0953
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DIW085N06


MOSFETs MOSFET, TO-247-3L, 65V, 85A, 150C, N
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Diotec 22
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AUD 5.3534
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STP25N60M2-EP


N-Channel 600 V 18A (Tc) 150W (Tc) Through Hole TO-220
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STMicroelectronics 22
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AUD 7.0651
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18 A600 V188 mOhmsN - Channel 2 V- 55 C+ 150 C150 WThrough HoleTO - 220 - 3 Si1 Channel25 V29 nCEnhancement Mdmesh
NVMTS0D7N06CTXG


MOSFET AFSM T6 60V SG NCH
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ON Semiconductor 22
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AUD 9.8179
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464 A60 V720 uOhmsN - Channel 2 V- 55 C+ 175 C5 w , 294.6 WSmd/SmtDFN - 8Cut TapeSi1 Channel10 V72 nCEnhancementAec - Q101 
S2M0080120D


1.2kV 41A 231W 100m@20A,20V 4V@10mA 1PCSNChannel TO-247AD MOSFETs ROHS
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SMC Diode 22
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AUD 11.2008
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FMM22-05PF


IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 500V 13A
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IXYS 22
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AUD 28.4388
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13 A500 V270 mOhmsN - Channel 5 V- 55 C+ 150 C132 WThrough HoleISOPLUS - I4 - 5TubeSi2 Channel30 V50 nC  Polarhv
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