MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMK115N15HG4


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 25
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AUD 2.2567
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FDPF390N15A-VB


200V 45A 38m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 25
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AUD 2.5029
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HSP1502


TO-220 MOSFETs ROHS
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HUASHUO 25
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AUD 2.5152
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STF18NM60N


Transistor: N-MOSFET; unipolar; 600V; 8.2A; 30W; TO220FP
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STMicroelectronics 25
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AUD 2.6746
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            mdmesh      
IPA60R160C6


MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6
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Infineon 25
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AUD 2.7418
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23.8 A600 V160 mOhmsn - channel 3 V- 55 C+ 150 C34 Wthrough holeTO - 220 - 3 FPTubesi1 channel20 V75 nC  coolmos
STF13N80K5


Transistor: N-MOSFET; unipolar; 800V; 7.6A; 35W; TO220FP
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STMicroelectronics 25
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AUD 5.1821
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            Mdmesh      
NVB110N65S3F


MOSFET SUPERFET3 650V D2PAK PKG
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ON Semiconductor 25
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AUD 7.5253
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30 A650 V110 mOhmsN - Channel 3 V- 55 C+ 150 C240 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V58 nCEnhancementAec - Q101 
STP33N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-220 package
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STMicroelectronics 25
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AUD 7.6301
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25 A600 V125 mOhmsN - Channel 3.25 V- 55 C+ 150 C190 WThrough HoleTO - 220 - 3TubeSi1 Channel25 V33.4 nCEnhancement Mdmesh
IPB110N20N3LF


Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
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Infineon 25
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AUD 8.4153
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            Optimos 3      
B2M065120Z


Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
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BASiC Semiconductor 25
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AUD 16.7791
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