MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD8N10L-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.4433
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STD3NK50ZT4-VB


650V 4A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.4733
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HSBA4909


40V 15A 36W 1.5V@250uA 1PCSN-Channel&1PCSP-Channel -55?~+150?@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 25
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AUD 0.4812
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IRFR812PBF-VB


650V 4A 2.2Ω@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.4896
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APM4910KC-TRL-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.4951
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SI4401DY-T1-E3-VB


40V 11A 13m@10V 1PCSPChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.512
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ASDM12N65F-T


TO-220F MOSFETs ROHS
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Ascend 25
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AUD 0.5227
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VBZM100N03


30V 260A 1mO@10V,260A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.5323
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IRLZ14PBF-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 25
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AUD 0.5392
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SI1022R-T1-GE3


MOSFET 60V Vds 20V Vgs SC75A
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Vishay 25
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AUD 0.5716
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330 mA60 V2.25 OhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement Trenchfet
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