MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA50R190CE


Trans MOSFET N-CH 500V 18.5A
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Infineon 28
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AUD 2.4183
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  500 v                
FDD86250-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 28
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AUD 2.461
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IRFIB41N15DPBF-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 28
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AUD 2.4703
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NTMFS6H824NT1G


80V 4.5m 4V@140uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
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ON Semiconductor 28
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AUD 2.9904
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IPT039N15N5ATMA1-VB


TOLL-8 MOSFETs ROHS
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VBsemi Elec 28
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AUD 3.0778
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CSD16401Q5T


MOSFET 25-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
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Texas Instruments 28
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AUD 3.0849
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261 A25 V2.3 mOhmsN - channel 1.2 V- 55 C+ 150 C156 WSmd/smtVSON - CLIP - 8ReelSi1_Channel- 12 v to + 16 V21 nCEnhancement Nexfet
IXTA90N075T2


IXYS MOSFET 90 Amps 75V 0.01 Rds
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IXYS 28
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AUD 3.1522
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90 A75 V10 mOhmsn - channel  - 55 C+ 175 C180 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V enhancement  
NTE2942


Transistor: N-MOSFET; 100V; 9.7A; TO220F
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NTE 28
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AUD 3.3851
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IRFP064NPBF-VB


60V 150A 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 28
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AUD 3.8967
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FDS8842NZ


MOSFET 40V NCh PowerTrench w/MOSFET
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ON Semiconductor 28
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AUD 4.0365
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14.9 A40 V7 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement powertrench
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