MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFH80N65X2W


TO-247 MOSFETs ROHS
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IXYS 29
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AUD 14.8607
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IXFK94N50P2


N-Channel 500 V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)
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IXYS 29
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AUD 15.4712
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94 A500 V55 mOhmsN - Channel  - 55 C+ 150 C1.3 kWThrough HoleTO - 264 - 3TubeSi1 Channel30 V   Hiperfet
IXTH80N65X2


MOSFET DiscMSFT NChUltraJnctn X2Class TO-247AD
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IXYS 29
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AUD 15.9429
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80 A650 V38 mOhmsN - Channel 2.7 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3 Si1 Channel30 V137 nCEnhancement Hiperfet
SIHG80N60EF-GE3


MOSFET 650V Vds; 30V Vgs TO-247AC
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Vishay 29
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AUD 18.7588
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80 A600 V32 mOhmsN - Channel 2 V- 55 C+ 150 C520 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V400 nCEnhancement  
WMJ99N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
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Wayon 29
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AUD 19.6
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            WMOS F2      
IXFK44N80P


N-Channel 800 V 44A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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IXYS 29
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AUD 23.5785
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44 A800 V190 mOhmsn - channel  - 55 C+ 150 C1200 Wthrough holeTO - 264 - 3Tubesi1 channel30 V enhancement hiperfet
APT29F100B2


MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS
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Microchip 29
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AUD 28.1294
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30 A1 kV440 mOhmsN - Channel 4 V- 55 C+ 150 C1.04 kWThrough HoleT - MAX - 3TubeSi 30 V260 nCEnhancement  
IXFR20N120P


MOSFET 26 Amps 1200V 1 Rds
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IXYS 29
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AUD 37.9881
Multiples of: 1

13 A1.2 kV630 mOhmsN - Channel  - 55 C+ 150 C290 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
IXTR210P10T


MOSFET TrenchP Channel Power MOSFETs
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IXYS 29
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AUD 54.6627
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195 A100 V8 mOhmsP - Channel     Through HoleTO - 247 - 3TubeSi      
IXFR32N100Q3


MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A
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IXYS 29
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AUD 57.7343
Multiples of: 1

23 A1 kV350 mOhmsN - Channel   + 150 C570 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V195 nC  Hiperfet
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