MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB20NM60-VB


650V 20A 330m@10V,8A 180W 2V@250uA TO-263 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 31
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AUD 3.0768
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IPP120N08S4-03


MOSFET MOSFET_(75V 120V(
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Infineon 31
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AUD 3.2027
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TSM048NB06LCR RLG


Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
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Taiwan Semiconductor 31
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AUD 3.3224
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IPA80R460CEXKSA2-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 31
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AUD 3.3788
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STD12N60M6


MOSFETs N-channel 600 V, 0.29 Ohm typ 12 A MDmesh M6 Power MOSFET
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STMicroelectronics 31
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AUD 3.68
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NTPF250N65S3H


MOSFET SUPERFET3 FAST 250MOHM TO-220F
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ON Semiconductor 31
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AUD 4.667
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13 A650 V250 mOhmsN - Channel 4 V- 55 C+ 150 C29 WThrough HoleTO - 220 - 3 Si1 Channel- 30 V , + 30 V24 nCEnhancement  
SUM60020E-GE3


MOSFET N-Channel 80 V D-S MOSFET
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Vishay 31
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AUD 5.2704
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150 A80 V2.47 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 4TubeSi1 Channel20 V151.2 nCEnhancement Trenchfet
IPP60R060P7-VB


600V 43A 60m@10V 4.5V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 31
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AUD 6.5421
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ALD212900PAL


MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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Advanced Linear Devices 31
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AUD 6.9119
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79 mA10 V14 OhmsN - Channel 20 mV0 C+ 70 C500 mWThrough HolePDIP - 8TubeSi2 Channel10.6 V Depletion  
PSMN1R1-30PL,127


Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W; TO220AB
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Nexperia 31
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AUD 8.5881
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120 A30 V1.3 mOhmsN - Channel 1.3 V- 55 C+ 175 C338 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V243 nCEnhancement  
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