MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW60R160C6


N-Channel 600 V 23.8A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
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Infineon 32
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AUD 5.3275
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23.8 A600 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C176 WThrough HolePG - TO 247 - 3TubeSi1 Channel20 V75 nCEnhancement Coolmos
TK090E65Z,S1X


MOSFETs 650V DTMOS VI TO-220 90MOHM
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Toshiba 32
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AUD 5.9761
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WMM040N15HG2


Transistor: N-MOSFET; unipolar; TO263
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Wayon 32
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AUD 6.2269
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IXFH22N60P3


MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET
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IXYS 32
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AUD 6.4358
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22 A600 V360 mOhmsN - Channel 5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V38 nCEnhancement HiPerFET
IXTQ22N60P


MOSFET 22.0 Amps 600 V 0.33 Ohm Rds
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IXYS 32
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AUD 7.4373
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22 A600 V350 mOhmsn - channel  - 55 C+ 150 C400 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement  
STP42N65M5


Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; TO220-3
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STMicroelectronics 32
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AUD 8.9741
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            Supermesh      
KN3M50120K


TO-247-4 SiC MOSFETs ROHS
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KNSCHA 32
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AUD 14.1065
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APT8056BVRG


Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247
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Microchip 32
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AUD 25.0187
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16 A800 V560 mOhmsN - Channel 2 V- 55 C+ 150 C370 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V75 nCEnhancement  
RF1K49093-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 32
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AUD 0.3456
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1653 CMD1653-VB


30V 80A 5m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 32
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AUD 0.3579
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