MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA60R280P6


Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 513
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AUD 1.3479
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150 A600 V280 OhmsN - Channel 3.5 V- 55 C+ 150 C32 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V25.5 nCEnhancement Coolmos
FQB50N06L-VB


60V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 41
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AUD 1.137
Multiples of: 1

                   
IRL2910SPBF-VB


100V 18m@10V 2V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 37
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AUD 1.1348
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CSD25402Q3AT


MOSFET -20-V, P channel NexFET power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 37
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AUD 1.1461
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STP55NF06L-VB


60V 11m@10V 1.9V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 37
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AUD 0.947
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JSM40N20P


200V 40A 50m@10V,20A 1PCSNChannel TO-247 MOSFETs ROHS
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JSMSEMI 37
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AUD 1.2815
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FQP34N20


200V 40A 60mO@10V,40A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 37
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AUD 1.4111
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IRL3803PBF-VB


30V 150A 2m@10V,150A 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 28
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AUD 1.137
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FQP10N60C-VB


650V 12A 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 28
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AUD 1.2071
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SISS92DN-T1-GE3


MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
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Vishay 0
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AUD 0.8045
Multiples of: 3000

12.3 A250 V173 mOhmsN - Channel 2 V- 55 C+ 150 C65.8 WSmd/SmtPOWERPAK - 1212 - 8SH - 8Cut TapeSi1 Channel20 V16 nCEnhancement Trenchfet; Powerpak
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