MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302HDS-T1-GE3


MOSFETs N-CHANNEL 20-V (D-S) MOSFET
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Vishay 2063
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AUD 0.0919
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NTD25P03LG-HXY


TO-252-2L MOSFETs ROHS
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HXY MOS 522
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AUD 0.2311
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TK040N60Z1,S1F


MOSFETs 600V DTMOS6 TO-247 40mohm
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Toshiba 103
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AUD 12.9866
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20 A600 V40 mOhmsN - Channel 4 V + 150 C297 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , + 30 V85 nCEnhancement  
SIHG47N60E-GE3


MOSFET 600V Vds 30V Vgs TO-247AC
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Vishay 38
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AUD 11.2818
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47 A600 V64 mOhmsN - Channel 4 V- 55 C+ 150 C357 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V148 nCEnhancement  
IXFP26N65X2


MOSFET MOSFET DISCRETE
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IXYS 38
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AUD 12.0149
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IXFH24N90P


N-Channel 900 V 24A (Tc) 660W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 38
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AUD 14.657
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24 A900 V420 mOhmsn - channel 6.5 V- 55 C+ 150 C660 Wthrough holeTO - 247 - 3Tubesi1 channel30 V130 nCenhancement hiperfet
STF12N120K5


Transistor: N-MOSFET; unipolar; 1200V; 7.6A; 40W; TO220FP
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STMicroelectronics 38
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AUD 20.1851
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            Mdmesh      
TK100L60W,VQ


Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
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Toshiba 38
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AUD 29.2567
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100 A600 V15 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C797 WThrough HoleTO - 3P - 3ReelSi1 Channel30 V360 nC  Dtmosiv
QM2N7002E3K1


SOT-23S MOSFETs ROHS
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uPI Semiconductor 37
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AUD 0.0271
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BSS123TA


Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
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Diodes Incorporated 37
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AUD 0.1128
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170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
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