MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ0901NS


MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 44
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AUD 1.7473
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40 A30 V1.7 mOhmsN - Channel 2.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V23 nC  Optimos
IPB054N06N3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
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Infineon 40
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AUD 1.3381
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            Optimos 3      
FDMS86320-VB


80V 60A 1PCSNChannel DFN-8(5X6) MOSFETs ROHS
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VBsemi Elec 40
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AUD 1.6901
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DMP3056LSD


MOSFET, PP CH, W DIO, 30V, 6.9A, SO8
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Diodes Incorporated 40
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AUD 1.6944
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   Dual P Channel               
FDB035N10A


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 40
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AUD 3.778
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214 A100 V3 mOhmsN - Channel 4 V  333 WSmd/SmtD2PAKReelSi1 Channel20 V89 nC  Powertrench
FDP22N50N


Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
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ON Semiconductor 40
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AUD 5.0985
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            Unifet      
NTMFSC4D2N10MC


N-Channel 100V 29.6A (Ta), 116A (Tc) 7.9W (Ta), 122W (Tc) Surface Mount 8-DFN (5.1x6.15)
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ON Semiconductor 40
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AUD 5.9839
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          8 - PowervdfnDigi - Reel®Mosfet (Metal Oxide)      
IPDD60R125G7XTMA1


Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm:54A
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Infineon 40
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AUD 6.7075
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            Coolmos G7      
STD6N62K3


MOSFET N-Channel 620V 1.1 Ohms 5.5A
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STMicroelectronics 40
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AUD 8.3259
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5.5 A650 V1.28 OhmsN - Channel  - 55 C+ 150 C90 WSmd/SmtDPAKReelSi1 Channel30 V34 nCEnhancement Mdmesh
CSD17312Q5


N-Channel 30 V 38A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 32
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AUD 3.076
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38 A30 V1.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C3.2 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel10 V28 nC  Nexfet
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