MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ123N08NS3GATMA1


MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
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Infineon 4676
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AUD 1.8267
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           Reel      Optimos
VBQA1303


MOSFET N Channel 30V 80A 2.5V @ 250uA 3mO @ 80A,10V QFN8(5X6) RoHS
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VBsemi Elec 42
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AUD 0.9386
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AUIRFR8401TRR-VB


40V 130A 3.5m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 42
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AUD 1.5994
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WSR180N10


TO-220AB MOSFETs ROHS
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Winsok 42
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AUD 1.4284
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KIA2806A


MOSFET N Trench 60V 160A 4V @ 250uA 4.5 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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KIA 42
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AUD 2.0866
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SQ4532AEY-T1_GE3


MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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Vishay 42
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AUD 2.1424
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7.3 A , 5.3 A30 V21 mOhms , 56 mOhmsN - Channel, P - Channel 1.5 v , 2.5 V- 55 C+ 175 C3.3 w , 3.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V5.9 nC , 7.9 nCEnhancementAec - Q101Trenchfet
STF13N60DM2


MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
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STMicroelectronics 42
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AUD 2.2567
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11 A600 V310 mOhmsN - Channel 3 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3 Si1 Channel25 V19 nCEnhancement Mdmesh
IRFIB6N60APBF


N-Channel 600 V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3
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Vishay 42
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AUD 2.5701
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5.5 A600 V750 mOhmsN - Channel 2 V- 55 C+ 150 C60 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V49 nCEnhancement  
BSC0503NSIATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
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Infineon 40
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AUD 1.1981
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            Optimos 5      
FQP8N60C-VB


600V 8A 780m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 33
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AUD 0.8293
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