MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD18534KCS


60V 120A 5mO@10V,120A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 43
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AUD 0.9865
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WSK150N10


TO-263-2L MOSFETs ROHS
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Winsok 43
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AUD 1.1197
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VBQA2202K


200V 2@10V 1PCSPChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 43
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AUD 1.0359
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SPD15P10PG-VB


100V 16A 100m@10V 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 43
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AUD 0.9386
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IRF7751TRPBF-VB


TSSOP-8 MOSFETs ROHS
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VBsemi Elec 43
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AUD 1.29
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SI4336DY-T1-E3-VB


30V 25A 3m@10V 1PCSNChannel SOP-8 MOSFETs ROHS
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VBsemi Elec 43
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AUD 0.9386
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VBA2305


MOSFET P Channel 30V 18A 2.2V @ 250uA 5mO @ 18A,10V SO-8 RoHS
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VBsemi Elec 43
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AUD 0.9649
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JCS20N60FH-220MF


MOSFET N Trench 600V 20A (Tc) 5V @ 250uA 390 mΩ @ 10A,10V TO-220MF RoHS
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Jilin 43
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AUD 1.3274
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DMNH45M7SCT


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 43
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AUD 1.4612
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          TO - 220 - 3TubeSi      
TK32A12N1,S4X


MOSFET MOSFET NCh11ohm VGS10V10uAVDS120V
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Toshiba 38
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AUD 1.1886
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32 A120 V11 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C30 WThrough HoleTO - 220 - 3 Si1 Channel20 V34 nCEnhancement  
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