MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP055N08NF2S


TO-220 MOSFETs ROHS
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Infineon 44
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AUD 2.0856
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SPA02N80C3-VB


850V 5.5A 2400m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 44
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AUD 1.6613
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WMK340N20HG2


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 44
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AUD 2.4657
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SIHG11N80AEF-GE3


MOSFETs EF Series Power MOSFET With Fast Body Diode
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Vishay 44
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AUD 3.0209
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5 A800 V483 mOhmsN - Channel 4 V- 55 C+ 150 C78 WThrough HoleTO - 247AC - 3Reel , Cut TapeSi1 Channel- 30 V , + 30 V27 nCEnhancement  
SPP20N60C3-VB


650V 190m@10V 3.5V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 44
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AUD 4.0278
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STP20NM50FD


MOSFET N-Ch 500 Volt 20 Amp
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STMicroelectronics 44
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AUD 4.3045
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20 A500 V250 mOhmsN - Channel30 V - 65 C+ 150 C192 WThrough HoleTO - 220 - 3Tube    Enhancement  
FCP099N60E


MOSFET SuperFET2 600V Slow version
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ON Semiconductor 44
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AUD 5.3358
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37 A600 V87 mOhmsN - Channel 3.5 V- 55 C+ 150 C357 WThrough HoleTO - 220 - 3BulkSi 30 V114 nCEnhancement Superfet Ii
2SK215-VB


TO-220AB MOSFETs ROHS
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VBsemi Elec 42
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AUD 2.0391
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CSD87588N


Mosfet Array 2 N-Channel (Half Bridge) 30V 25A 6W Surface Mount 5-PTAB (3x2.5)
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Texas Instruments 35
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AUD 2.6458
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25 A , 25 A30 v , 30 V10.4 mOhms , 3.5 mOhmsN - Channel20 V1.1 v to 1.9 V- 55 C+ 150 C6 WSmd/SmtPTAB - 5ReelSi2 Channel20 V2.8 nC  Nexfet
IRFS23N20D-VB


200V 40A 48m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 3
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AUD 2.1572
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