MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
APT7M120B


N-Channel 1200 V 8A (Tc) 335W (Tc) Through Hole TO-247 [B]
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Microchip 142
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AUD 7.5933
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8 A1.2 kV1.5 OhmsN - Channel30 V4 V- 55 C+ 150 C335 WThrough HoleTO - 247 - 3TubeSi 30 V80 nCEnhancement Power Mos 8
FDMS86150


MOSFET PT5 100V/20V Nch PowerTrench MOSFET
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ON Semiconductor 48
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AUD 4.9557
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60 A100 V4.85 mOhmsN - Channel  - 55 C+ 150 C156 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench Power Clip
FCB20N60FTM-VB


650V 20A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 45
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AUD 3.3023
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IPW90R340C3XKSA1


MOSFET LOW POWER_LEGACY
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Infineon 45
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AUD 5.4214
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           Tube       
TK115A65Z5,S4X


MOSFETs N-ch MOSFET, 650 V, 0.115 ohma.10V, TO-220SIS, DTMOS?
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Toshiba 45
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AUD 6.8134
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24 A650 V115 mOhmsN - Channel 4.5 V + 150 C45 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V42 nCEnhancement  
NTE2388


Transistor: N-MOSFET; 200V; 18A; TO220
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NTE 45
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AUD 9.7164
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   N Channel               
FDZ661PZ


MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET
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ON Semiconductor 44
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AUD 1.1155
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2.6 A20 V140 mOhmsP - Channel  - 55 C+ 150 C1.3 WSmd/SmtWLCSPReelSi 8 V   Powertrench
NTD4860NT4G


30V 80A 5mO@10V,80A N Channel TO-252-3 MOSFETs ROHS
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VBsemi Elec 44
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AUD 0.3101
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CSD18510KTTT


MOSFET 40V N-Channel NexFET Power MOSFET
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Texas Instruments 35
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AUD 4.0537
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200 A40 V2 mOhmsN - Channel 1.4 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V153 nCEnhancement Nexfet
ZVN4310GTA


N-Channel 100 V 1.67A (Ta) 3W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 0
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AUD 0.9018
Multiples of: 1000

1.67 A100 V750 mOhmsN - Channel  - 55 C+ 150 C3 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V Enhancement  
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