MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ASR65R120EFD


TOLL-8L MOSFETs ROHS
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ANHI 47
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AUD 2.1513
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FDA70N20-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 46
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AUD 2.6684
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DMT4002LPS-13


MOSFET MOSFET BVDSS 31V-40V
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Diodes Incorporated 46
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AUD 3.7625
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
IPP60R099CP


MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP
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Infineon 46
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AUD 4.1364
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31 A600 V90 mOhmsn - channel 2.5 V- 55 C+ 150 C255 Wthrough holeTO - 220Tubesi1 channel20 V80 nCenhancement coolmos
STF28N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 46
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AUD 4.2543
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21 A600 V0.13 OhmsN - Channel 3 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3 Si1 Channel+/- 25 V34 nCEnhancement Mdmesh
PSMN1R3-80SSFJ


MOSFETs PSMN1R3-80SSF/SOT1235/LFPAK88
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Nexperia 46
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AUD 4.4157
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335 A80 V1.2 mOhmsN - Channel 3 V- 55 C+ 175 C500 WSMD/SMTLFPAK - 88 - 4Reel , Cut TapeSi1 Channel20 V164 nCEnhancement  
TK31E60X,S1X


Toshiba MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)
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Toshiba 46
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AUD 5.6149
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7.7 A600 V73 mOhmsN - Channel 3.5 V- 55 C+ 150 C230 WThrough HoleTO - 220 - 3 Si1 Channel30 V65 nCEnhancement Dtmosiv
IXFH12N100P


TO-247AD MOSFETs ROHS
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Littelfuse 46
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AUD 19.4785
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AOD480-VB


30V 70A 7m@10V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 45
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AUD 0.3746
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IRF7424TRPBF


30V 11.6A 12.5mO@10V,11.6A P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 45
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AUD 0.4362
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