MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STH270N4F3-2


STMicroelectronics MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III
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STMicroelectronics 48
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AUD 2.6433
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180 A40 V1.4 mOhmsN - Channel20 V2 V- 55 C+ 175 C300 WSmd/SmtH2PAK - 2ReelSi1 Channel20 V110 nCEnhancementAec - Q101Stripfet
IXFP4N85X


MOSFET 850V/3.5A Ultra Junction X-Class HiPerFET Power MOSFET, TO-220
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IXYS 48
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AUD 2.8501
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         Through HoleTO - 220 - 3TubeSi     Hiperfet
STD11N60M6


MOSFETs N-channel 600 V, 500 mOhm typ 8 A MDmesh M6 Power MOSFET
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STMicroelectronics 48
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AUD 2.8983
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FQB34N20L-VB


- MOSFETs ROHS
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VBsemi Elec 48
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AUD 2.1572
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3PN1005-VB TO263


100V 140A 0.004@10V,30A 3.75W 2V@250uA TO-263 MOSFETs ROHS
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VBsemi Elec 48
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AUD 2.2771
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SQJ123ELP-T1_GE3


MOSFETs P-CHANNEL 12-V (D-S) 175C MOSFET
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Vishay 48
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AUD 3.0813
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238 A12 V4 mOhmsP - Channel 1.5 V- 55 C+ 175 C375 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 8 V , + 8 V120 nCEnhancement  
20N60 TO220-VB


650V 20A 160m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 48
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AUD 3.1227
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IXTA90N075T2


IXYS MOSFET 90 Amps 75V 0.01 Rds
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IXYS 48
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AUD 3.1522
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90 A75 V10 mOhmsn - channel  - 55 C+ 175 C180 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V enhancement  
TK125A60Z1,S4X


MOSFETs N-ch MOSFET, 600 V, 0.125 ohma.10V, TO-220SIS, DTMOS?
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Toshiba 48
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AUD 3.6612
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20 A600 V125 mOhmsN - Channel 4 V + 150 C40 WThrough HoleTO - 220SIS - 3TubeSi1 Channel30 V28 nCEnhancement  
IXFP76N15T2


MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A
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IXYS 29
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AUD 3.1155
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76 A150 V20 mOhmsN - Channel 4.5 V- 55 C+ 175 C350 WThrough HoleTO - 220 - 3TubeSi 20 V97 nCEnhancement Hiperfet
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