MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP45N15V2


Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
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ON Semiconductor 58
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AUD 3.0299
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   N Channel               
IPA60R380E6


Infineon Technologies MOSFET N-Ch 650V 10.6A TO220FP-3 CoolMOS E6
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Infineon 58
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AUD 3.0959
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10.6 A650 V380 mOhmsN - Channel20 V - 55 C+ 150 C31 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V32 nC  Coolmos
CSD18531Q5AT


MOSFET 60V N-channel NexFET Power MOSFET
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Texas Instruments 58
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AUD 3.1334
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134 A60 V4.6 mOhmsn - channel 1.5 V- 55 C+ 175 C156 Wsmd/smtVSONP - 8Cut Tapesi1 channel10 V43 nCenhancement nexfet
IRFS4115PBF-VB


150V 90A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 58
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AUD 3.3276
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STFW1N105K3


STMicroelectronics MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM)
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STMicroelectronics 58
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AUD 3.3704
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1.4 A1050 V8 OhmsN - Channel 3 V- 55 C+ 150 C20 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V13 nCEnhancement Supermesh
IXTQ69N30P-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 58
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AUD 3.488
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CI40N65SM(TOKMAS)


TO-247-3 SiC MOSFETs ROHS
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Tokmas 58
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AUD 4.4683
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IPW65R099CFD7AXKSA1


MOSFET AUTOMOTIVE
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Infineon 58
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AUD 5.3522
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24 A650 V99 mOhmsN - Channel 3.5 V- 55 C+ 150 C127 WThrough HoleTO - 247 - 3Coolmos , TubeSi1 Channel- 20 V , + 20 V53 nCEnhancementAEC - Q101CoolMOS
TK28N65W5,S1F


MOSFET TO-247OS PD=230W 1MHz PWR MOSFET TRNS
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Toshiba 58
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AUD 6.9776
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27.6 A650 V130 mOhmsN - Channel 4.5 V- 55 C+ 150 C230 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V90 nCEnhancement Dtmosiv
STY60NK30Z


MOSFET N Trench 300V 60A 4.5V @ 100uA 45 mΩ @ 30A,10V MAX-247 RoHS
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STMicroelectronics 58
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AUD 7.5433
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