MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR638ADP-T1-RE3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 64
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AUD 1.5876
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100 A40 V730 uOhmsN - Channel 1.1 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V165 nCEnhancement Trenchfet, Powerpak
IPB70P04P4-09


Infineon Technologies MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2
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Infineon 64
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AUD 1.7567
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- 70 A- 40 V9.1 mOhmsp - channel  - 55 C+ 175 C75 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V54 nC aec - q101optimos
SPA08N80C3


MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3
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Infineon 64
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AUD 1.7896
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8 A800 V560 mOhmsN - Channel 2.1 V- 55 C+ 150 C40 WThrough HolePG - TO - 220FP - 3TubeSi1 Channel10 V45 nCEnhancement Coolmos
STP6N60M2


Transistor: N-MOSFET; unipolar; 600V; 2.9A; 60W; TO220-3
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STMicroelectronics 64
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AUD 1.8179
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            supermesh      
IPL60R185CFD7


Transistor: N-MOSFET; unipolar; 600V; 9A; 85W; PG-VSON-4
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Infineon 64
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AUD 1.9561
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            Optimos      
IXTU8N70X2


MOSFET 700V/8A Ultra Junct X2-Class MOSFET
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IXYS 64
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AUD 3.3642
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8 A700 V500 mOhmsN - Channel 2.5 V- 55 C+ 150 C150 WThrough HoleTO - 251 - 3TubeSi1 Channel30 V12 nCEnhancement  
WMM020N10HGS


Transistor: N-MOSFET; unipolar; TO263
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Wayon 64
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AUD 3.7403
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TK31Z60X,S1F


MOSFET TO-247-4L PD=230W 1MHz PWR MOSFET TRNS
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Toshiba 64
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AUD 12.4423
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30.8 A600 V88 mOhmsN - Channel 3.5 V- 55 C+ 150 C230 WThrough HoleTO - 247 - 4TubeSi1 Channel30 V65 nCEnhancement Dtmosiv - H
am3400a-VB


30V 6.5A 30m@10V 1PCSNChannel SOT-23-3 MOSFETs ROHS
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VBsemi Elec 63
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AUD 0.0848
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VBK362K


60V 0.3A 2.5O@10V,0.3A 2 N-Channel SC-70-6 MOSFETs ROHS
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VBsemi Elec 63
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AUD 0.0858
Multiples of: 5

                   
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