MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVT100N10C


TO-220C MOSFETs ROHS
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NH 996
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AUD 0.4707
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NVMFS6H800NWFT1G


MOSFET TRENCH 8 80V NFET
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ON Semiconductor 65
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AUD 3.7104
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203 A80 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancementAec - Q101 
SQ4284EY-T1_GE3


MOSFET 40V 8A 3.9W AEC-Q101 Qualified
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Vishay 65
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AUD 4.1072
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8 A40 V11.2 mOhmsN - Channel 1.5 V- 55 C+ 175 C3.9 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V45 nC , 45 nCEnhancementAec - Q101Trenchfet
BSC22DN20NS3 G-VB


200V 30A 38m@10V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 65
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AUD 4.1455
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FDH038AN08A1


MOSFET N-Ch PowerTrench
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ON Semiconductor 65
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AUD 10.4746
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80 A75 V3.5 mOhmsN - Channel  - 55 C+ 175 C450 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Powertrench
IXFH50N85X


MOSFET 850V Ultra Junction X-Class Pwr MOSFET
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IXYS 65
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AUD 16.6926
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50 A850 V105 mOhmsN - Channel 3.5 V- 55 C+ 150 C890 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V152 nCEnhancement Hiperfet
VBJ2456


MOSFET P Trench 35V 6.2A 1.8V @ 250uA 60 mΩ @ 4A,4.5V SOT-223 RoHS
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VBsemi Elec 64
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AUD 0.4338
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FDS4897AC-NL-VB


60V 5.3A 26mΩ@10V,4.3A 1PCSN-Channel&1PCSP-Channel SOP8 MOSFETs ROHS
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VBsemi Elec 64
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AUD 0.622
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11NM70G-TN3-R


TO-252-2 MOSFETs ROHS
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Unisonic 64
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AUD 0.6103
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AUIRFR4105ZTRPBF-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 64
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AUD 0.7278
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