MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMM048NV6HG4


Transistor: N-MOSFET; unipolar; TO263
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Wayon 67
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AUD 1.1304
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IRFZ24SPBF-VB


60V 40A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 67
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AUD 1.1757
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VBZMB18N65


650V 18A 500mO@10V,18A N Channel TO-220F-3 MOSFETs ROHS
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VBsemi Elec 67
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AUD 1.1809
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IPD900P06NM


MOSFET TRENCH 40<-<100V
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Infineon 67
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AUD 1.2023
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OSH9N90


900V 9A 155W 1 TO-3PNB MOSFETs ROHS
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OSEN 67
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AUD 1.3526
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IRFPE50-JSM


800V 7.8A 190W 1.2Ω@10V,4.7A N Channel TO-247 MOSFETs ROHS
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JSMSEMI 67
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AUD 1.7649
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TK10E60W,S1VX


Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Toshiba 67
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AUD 1.9209
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9.7 A600 V380 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C100 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V20 nCEnhancement  
SIR460DP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 67
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AUD 2.0625
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
PMV240ENEAR


MOSFETs 30 V, N-channel Trench MOSFET
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Nexperia 66
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AUD 0.0673
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850 mA30 V320 mOhmsN - Channel 2.6 V- 55 C+ 175 C390 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V610 pCEnhancement  
VBA3211


MOSFET 2 N Channel(Double) 20V 10A(Tc) 1V @ 250uA 9mO @ 5A,4.5V SO-8 RoHS
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VBsemi Elec 66
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AUD 0.3728
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