MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK3A60DA(STA4,Q,M)


MOSFET N-ch 600V 2.5A 30w 2.8 Ohm
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Toshiba 68
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AUD 1.0365
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2.5 A600 V2.8 OhmsN - Channel    30 WThrough HoleTO - 220 - 3TubeSi1 Channel     
SI2369BDS-T1-GE3


MOSFET 30-V D-S MOSFET P-CHANNEL
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Vishay 68
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AUD 1.0754
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7.5 A30 V27 mOhmsP - Channel 2.2 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 16 V12.9 nCEnhancement TrenchFET
WMM80N08TS


Transistor: N-MOSFET; unipolar; TO263
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Wayon 68
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AUD 1.0949
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AO8801


30V 5.2A 1.14W 36mO@10V,4.7A 2 P-Channel TSSOP-8 MOSFETs ROHS
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VBsemi Elec 68
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AUD 1.263
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WML15N60C4


Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 31W
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Wayon 68
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AUD 1.4021
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            WMOS C4      
IRFZ46NLPBF


Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
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Infineon 68
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AUD 1.6299
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53 A55 V16.5 mOhmsN - Channel    120 WThrough HoleTO - 262TubeSi1 Channel20 V48 nC   
STD2HNK60Z-1


MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A
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STMicroelectronics 68
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AUD 2.154
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2 A600 V4.8 OhmsN - Channel 3.75 V- 55 C+ 150 C45 WThrough HoleIPAK - 3TubeSi1 Channel30 V11 nCEnhancement Supermesh
IRFH7545TRPBF


MOSFET 60V StrongIRFET Power Mosfet
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Infineon 68
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AUD 2.3571
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85 A60 V6 mOhmsN - Channel20 V3.7 V- 55 C+ 150 C83 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V73 nC  Strongirfet
STP12NM50-VB


650V 15A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 68
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AUD 2.613
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IRFS7534TRL7PP


MOSFET MOSFET N CH 60V 240A D2PAK
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Infineon 68
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AUD 2.8896
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240 A60 V1.6 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C290 WSmd/SmtD2PAK - 7ReelSi1 Channel20 V200 nC  Strongirfet
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