MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WMO18P10TS


Transistor: P-MOSFET; unipolar; TO252
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Wayon 76
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AUD 0.606
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TSF14N30M


300V 14A 0.29 1PCSNChannel TO-220F MOSFETs ROHS
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Truesemi 76
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AUD 0.6571
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ZXMP10A17KTC


Diodes Incorporated MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM
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Diodes Incorporated 76
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AUD 0.731
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3.9 A- 100 V350 mOhmsP - Channel  - 55 C+ 150 C10.2 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
GT100P06K


null 60A 104W 13m@4.5V,15A 2.5V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
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GOFORD 76
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AUD 0.9754
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FDP150N10A_F102-VB


100V 100A 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 76
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AUD 0.9762
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DMT10H010LK3-13


MOSFET MOSFET BVDSS 61V-100V
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Diodes Incorporated 76
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AUD 1.0873
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         Smd/SmtTO - 252 - 3Cut TapeSi      
IQDH29NE2LM5CGSCATMA1


MOSFETs TRENCH <= 40V
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Infineon 76
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AUD 2.7746
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789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMT Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement OptiMOS
TSK50N30M


300V 50A 0.06 1PCSNChannel TO-247 MOSFETs ROHS
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Truesemi 76
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AUD 3.2527
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BSZ010NE2LS5ATMA1


MOSFET 25V Mosfet 10mOhm PQFN 3x3
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Infineon 76
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AUD 4.935
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40 A25 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8 FLCut TapeSi1 Channel16 V21 nCEnhancement  
ALD1105PBL


MOSFET Dual P&N-Ch. Pair
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Advanced Linear Devices 76
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AUD 6.2716
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4.8 mA , 2 mA12 V350 Ohms , 1.2 kOhmsN And P - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Through HolePDIP - 14TubeSi4 Channel10.6 V Enhancement  
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