MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPP06N80C3XKSA1


Infineon Technologies MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
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Infineon 82
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AUD 1.2116
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6 A800 V780 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V41 nCEnhancement Coolmos
MD23N50


500V 23A 220m@10V,10A 48W 4V@250uA 1 N-Channel TO-3P MOSFETs ROHS
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Minos 82
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AUD 1.3554
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IRFB7430PBF


MOSFET N Trench 40V 195A (Tc) 3.9V @ 250uA 1.3 mΩ @ 100A,10V TO-220AB RoHS
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Infineon 82
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AUD 1.8189
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409 A40 V1.3 mOhmsN - Channel    375 WThrough HoleTO - 220 - 3TubeSi 20 V460 nC  Strongirfet
FDPF55N06


Fairchild Semiconductor MOSFET 60V 55A N-Chan UniFET MOSFET
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ON Semiconductor 82
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AUD 1.9982
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55 A60 V22 mOhmsN - Channel25 V - 55 C+ 150 C48 WThrough HoleTO - 220FP - 3TubeSi1 Channel25 V Enhancement  
WML26N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 10.5A; Idm: 40A; 31W
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Wayon 82
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AUD 2.194
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            WMOS F2      
SIDR5102EP-T1-RE3


MOSFETs SOT669 100V 126A N-CH MOSFET
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Vishay 82
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AUD 2.3149
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8.9 A100 V5.6 mOhms  4 V- 55 C+ 175 C7.5 W  Reel , Cut TapeSi - 20 V , + 20 V20 nC   
SDM05M50DAS


MOSFET 5A 500V SOP-23H Intelligent Power Modules (IPM) ROHS
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Silan 82
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AUD 4.265
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FCMT125N65S3


MOSFET SF3 650V 125MOHM MO SFET
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ON Semiconductor 82
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AUD 5.1552
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24 A650 V125 mOhmsN - Channel 2.5 V- 55 C+ 150 C181 WSmd/SmtPQFN - 4Cut Tape 1 Channel30 V49 nCEnhancement  
FCH190N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor 82
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AUD 5.5657
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20.6 A650 V401 mOhmsN - Channel 3 V- 55 C+ 150 C208 WThrough HoleTO - 247 - 3TubeSi1 Channel+/- 20 V63 nCEnhancement Superfet Ii
IPP60R099CPXKSA1


Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
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Infineon 82
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AUD 5.5985
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            Coolmos Cp      
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