MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMTS001N06CTXG


MOSFET T6 60V SG PQFN8x8 EXPANSI
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ON Semiconductor 83
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AUD 2.5776
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FDMS86350


Fairchild Semiconductor MOSFET
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ON Semiconductor 83
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AUD 2.6428
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80 A80 V2 mOhmsN - Channel20 V3.8 V- 55 C+ 150 C156 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V110 nC  Powertrench Power Clip
BSC009NE2LS5I


MOSFET TRENCH <= 40V
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Infineon 83
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AUD 3.4963
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STL24NM60N


N-Channel 600 V 3.3A (Ta), 16A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV
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STMicroelectronics 83
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AUD 3.6448
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16 A600 V200 mOhmsN - Channel 4 V  3 WSmd/SmtPowerflat 8X8ReelSi1 Channel25 V46 nC  Mdmesh
NTTFS5C453NLTAG


MOSFET T6 40V NCH LL IN U8FL
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ON Semiconductor 83
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AUD 5.7216
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107 A40 V4.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C68 WSmd/SmtWDFN - 8ReelSi1 Channel+/- 20 V35 nCEnhancement  
TK62N60W5,S1VF


MOSFET DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
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Toshiba 83
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AUD 13.5612
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61.8 A600 V36 mOhmsN - Channel 3 V-+ 150 C400 WThrough HoleTO - 247 - 3 Si1 Channel30 V205 nCEnhancement Dtmosiv
WNM2021-3/MS


20V 820mA 220mΩ@4.5V,550mA 310mW 580mV@250uA 8pF@10V N Channel 50pF@10V 1.15nC@4.5V +150℃@(Tj) SOT-323 MOSFETs ROHS
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MSKSEMI 82
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AUD 0.0774
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BSS123LT1G-VB


100V 1PCSNChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 82
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AUD 0.08
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AGM40P26E


40V 4.5A 1.6W 36m@10V,6A 1.6V@250uA 1PCSPChannel SOT23-3 MOSFETs ROHS
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AGM-Semi 82
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AUD 0.0814
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SMS7400-VB


SOT-23 MOSFETs ROHS
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VBsemi Elec 82
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AUD 0.0848
Multiples of: 5

                   
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