MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA057N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 60A; 39W; TO220FP
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Infineon 95
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AUD 1.9224
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            optimos 3      
IRFR4620TRLPBF-VB


200V 25A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 95
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AUD 2.1145
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GC20N65M


TO-263 MOSFETs ROHS
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GOFORD 95
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AUD 2.4455
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IXTY26P10T


MOSFET TrenchP Power MOSFET
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IXYS 95
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AUD 3.809
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26 A100 V90 mOhmsP - Channel 4.5 V- 55 C+ 150 C150 WSmd/SmtTO - 252 - 3TubeSi 15 V52 nCEnhancement Trenchp
TK20N60W5,S1VF


N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247
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Toshiba 95
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AUD 4.1373
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20 A600 V150 mOhmsN - Channel 3 V- 55 C+ 150 C165 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V55 nCEnhancement Dtmosiv
TK25E60X,S1X


N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-220
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Toshiba 95
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AUD 4.5478
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25 A600 V105 mOhmsn - channel 2.5 V- 55 C+ 150 C180 Wthrough holeTO - 220 - 3Tubesi1 channel30 V40 nCenhancement dtmosiv
ASR65R046EFD


TOLL-8L MOSFETs ROHS
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ANHI 95
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AUD 4.4157
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PSMN1R4-100ASEJ


MOSFETs PSMN1R4-100ASE/SOT8000A/CCPAK1
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Nexperia 95
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AUD 5.5629
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340 A100 V1.36 mOhmsN - Channel 3.6 V- 55 C+ 175 C935 WSMD/SMTCCPAK1212Reel , Cut TapeSi1 Channel- 20 V , + 20 V244 nCEnhancement  
STD5NK60ZT4-VB


650V 4A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 94
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AUD 0.4515
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IPD600N25N3 G


MOSFET N-Ch 250V 25A DPAK-2 OptiMOS 3
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Infineon 91
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AUD 3.3692
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