MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPN2304S223RG-VB


SOT-23 MOSFETs ROHS
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VBsemi Elec 97
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AUD 0.1249
Multiples of: 5

                   
NTR2101PT1G


MOSFET -8V 3.7A P-Channel
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ON Semiconductor 97
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AUD 0.105
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
IRFR1205TRPBF-HXY


60V 30A 26mΩ@10V 2.5V N Channel TO-252-2L MOSFETs ROHS
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HXY MOS 97
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AUD 0.1487
Multiples of: 5

                   
PJM60N20TE


20V 60A 37W 6m@4.5V,25A 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Pingjingsemi 97
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AUD 0.1507
Multiples of: 5

                   
AGM30P25AP


30V 10A 28W 20m@10V,5A 1.5V@250uA 1PCSPChannel PDFN-8(3.3x3.3) MOSFETs ROHS
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AGM-Semi 97
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AUD 0.1513
Multiples of: 5

                   
RUF015N02TL


N-Channel 20 V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3
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ROHM 97
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AUD 0.1523
Multiples of: 5

1.5 A20 V180 mOhmsN - Channel 300 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V1.8 nCEnhancement  
SI2315BDS-T1-GE3-VB


30V 1PCSPChannel SOT-23 MOSFETs ROHS
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VBsemi Elec 97
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AUD 0.1535
Multiples of: 5

                   
Si1034CX-T1-GE3-VB


20V 600mA 360m@4.5V 1PCSNChannel SC-89-6 MOSFETs ROHS
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VBsemi Elec 97
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AUD 0.1545
Multiples of: 5

                   
WNM2024-3/TR


MOSFET N Trench 20V 3.3A 1V @ 250uA 36 mΩ @ 3.6A,4.5V SOT-23 RoHS
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Will Semiconductor 0
6 to 16 Weeks Calender.png

AUD 0.1058
Multiples of: 5

                   
DMG4466SSS-HXY


30V 8.5A 14mΩ 1PCSNChannel SOP-8 MOSFETs ROHS
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HXY MOS 0
6 to 16 Weeks Calender.png

AUD 0.1159
Multiples of: 5

                   
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