MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLS3036TRLPBF


MOSFET N Trench 60V 195A 2.5V @ 250uA 2.4 mΩ @ 165A,10V TO-263-2 RoHS
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Infineon 746
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AUD 6.4009
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270 A60 V2.4 mOhmsN - Channel 2.5 V + 175 C380 WSmd/SmtD2PAKReelSi1 Channel 140 nC   
IPTG111N20NM3FDATMA1


MOSFETs TRENCH >=100V
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Infineon 98
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AUD 13.3845
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4N06L30-VB


60V 35A 25m@10V,35A 1PCSNChannel TO-252-2 MOSFETs ROHS
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VBsemi Elec 97
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AUD 0.6736
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IRLR8726TRPBF-VB


30V 100A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 97
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AUD 0.8293
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HY3810B


MOSFET N Trench 100V 180A (Tc) 4V @ 250uA 6.5 mΩ @ 90A,10V TO-263-2L RoHS
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HuaYi 97
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AUD 1.3347
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STB7NK80ZT4


MOSFET N Trench 800V 5.2A (Tc) 4.5V @ 100uA 1.8 Ω @ 2.6A,10V D2PAK RoHS
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STMicroelectronics 97
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AUD 1.4012
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   N Channel               
TK6A80E,S4X(S


Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 18A; 45W; TO220FP
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Toshiba 97
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AUD 2.2567
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IXTP80N10T


MOSFET 80 Amps 100V 13.0 Rds
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IXYS 97
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AUD 3.1522
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80 A100 V14 mOhmsN - Channel  - 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Hiperfet
STW45NM60


Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
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STMicroelectronics 97
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AUD 11.0328
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            mdmesh      
SQD50N06-09L-GE3-VB


60V 50A 10mΩ@10V,20A 136W N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 92
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AUD 0.7278
Multiples of: 1

                   
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