MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUC120N04S6N006ATMA1


N-Channel 40V 120A (Tj) 187W (Tc) Surface Mount PG-TDSON-8-53
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Infineon 102
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AUD 2.0687
Multiples of: 1

          8 - PowertdfnDigi - Reel®Mosfet (Metal Oxide)      
IRFBC20STRLPBF


MOSFET N-Chan 600V 2.2 Amp
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Vishay 102
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AUD 2.2328
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2.2 A600 V4.4 OhmsN - Channel20 V - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
IXFH52N30Q


N-Channel 300 V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 102
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AUD 16.5657
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52 A300 V60 mOhmsN - Channel  - 55 C+ 150 C360 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement Hyperfet
AO4419(UMW)


SOP-8 MOSFETs ROHS
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Youtai 101
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AUD 0.0844
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DMN63D8LDWQ-7


MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
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Diodes Incorporated 101
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AUD 0.0982
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220 mA30 V2.8 Ohms , 2.8 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V870 pC , 870 pCEnhancementAec - Q101 
AGM1075D


100V 16A 35W 55m@10V,10A 1.7V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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AGM-Semi 101
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AUD 0.1475
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ZXMN3A01FTA-VB


SOT-23 MOSFETs ROHS
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VBsemi Elec 101
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AUD 0.1531
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AOD478-MS


TO-252 MOSFETs ROHS
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MSKSEMI 92
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AUD 0.1163
Multiples of: 5

                   
RX3P12BATC16


MOSFETs RX3P12BAT is a low on-resistance power MOSFET suitable for switching applications.
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ROHM 71
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AUD 6.0582
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           TubeSi      
SSM3J36FS


20V 550mA 190mW P Channel SC-75-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.1269
Multiples of: 5

                   
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