MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
G450N10D52


100V 35A 38m@10V 2.5V 1PCSNChannel DFN5x6-8L MOSFETs ROHS
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GOFORD 128
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AUD 0.5305
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VBJ1101M


MOSFET N Channel 100V 4.5A 3V @ 250uA 110mO @ 6A,10V SOT223-3 RoHS
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VBsemi Elec 128
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AUD 0.6192
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IXTP2N100P


MOSFET 2 Amps 1000V 7.5 Rds
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IXYS 128
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AUD 3.2179
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2 A1 kV7.5 Ohmsn - channel  - 55 C+ 150 C86 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
TK10A80W,S4X


MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
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Toshiba 128
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AUD 3.6284
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9.5 A800 V460 mOhmsN - Channel 3 V + 150 C40 WThrough HoleTO - 220SIS - 3 Si1 Channel20 V19 nCEnhancement Dtmosiv
WMJ90N65SR


Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W
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Wayon 128
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AUD 12.5164
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            WMOS SR      
NXV65HR82DS2


MOSFET APM16 CAB SF3 FRFET 82MOHM 650V L FORMING
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ON Semiconductor 128
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AUD 45.8881
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26 A650 V82 mOhmsN - Channel 5 V- 40 C+ 125 C126 WThrough HoleAPMCA - 16TubeSi4 Channel- 20 V , + 20 V79.7 nCEnhancement  
2N7002K-T


MOSFETs MOSFET,SOT-23
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Rectron 127
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AUD 0.0443
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300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSMD/SMTSOT23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.7 nCEnhancement  
G1K6P15K


150V 24A 132m@10V 3.5V 1PCSPChannel TO-252 MOSFETs ROHS
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GOFORD 127
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AUD 0.7304
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IRF9530PBF-BE3


P-Channel 100V 12A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 113
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AUD 1.1263
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12 A100 V300 mOhmsP - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
HY3215W


150V 130A 11.5mΩ@10V,40A 349W 4V@250uA 194pF@25V N Channel 5925pF@25V 135nC@10V -55℃~+175℃@(Tj) TO-247 MOSFETs ROHS
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HuaYi 108
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AUD 1.7739
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