MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPZA60R180P7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 131
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AUD 2.6597
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            Coolmos P7      
AGM025N13LL


135V 305A 2.9m@10V,50A 357W 1.8V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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AGM-Semi 131
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AUD 3.7663
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IPW65R095C7XKSA1


Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-3
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Infineon 131
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AUD 5.2209
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            Coolmos      
TK39A60W,S4VX


MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
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Toshiba 131
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AUD 9.0905
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38.8 A600 V55 mOhmsN - Channel30 V3.7 V- 55 C+ 150 C50 WThrough HoleTO - 220FP - 3Cut TapeSi1 Channel30 V110 nCEnhancement Dtmosiv
UJ3C120150K3S


MOSFET 1200V/150mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
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UnitedSiC 131
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AUD 11.5268
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18.4 A1.2 kV180 mOhmsN - Channel 3.5 V- 55 C+ 175 C166.7 WThrough HoleTO - 247 - 3TubeSic1 Channel25 V30 nCEnhancement  
IPW65R029CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 131
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AUD 12.0836
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STN4102


30V 15A 22mΩ@10V,15A 25W N Channel TO-252 MOSFETs ROHS
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STANSON Tech 130
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AUD 0.0623
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NVR4501N


SOT-23 MOSFETs ROHS
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Leiditech 130
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AUD 0.1064
Multiples of: 5

                   
HY3810NA2W


TO-247A-3L MOSFETs ROHS
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HuaYi 34
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AUD 1.7083
Multiples of: 1

                   
IPP60R280P7XKSA1


600V 12A 53W 280mO@3.8A,10V N Channel TO-220-3 MOSFETs ROHS
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Infineon 9
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AUD 1.3167
Multiples of: 1

12 A600 V214 mOhmsN - Channel 3 V- 55 C+ 150 C53 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V18 nCEnhancement Coolmos
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