MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPZA65R018CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 135
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AUD 18.8642
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106 A700 V18 mOhmsN - Channel 4.5 V- 55 C+ 150 C446 WThrough HoleTO - 247 - 4TubeSi1 Channel- 20 V , + 20 V234 nCEnhancement  
STN4130


60V 30A 40mΩ@10V,20A 52W 2.5V@250uA N Channel TO-252-2 MOSFETs ROHS
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STANSON Tech 134
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AUD 0.1003
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CSD17308Q3T


MOSFET 30-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150
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Texas Instruments 134
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AUD 1.0949
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13 A30 V8.2 mOhmsN - channel 1.3 V- 55 C+ 150 C28 WSmd/smtVSON - CLIP - 8Reel-1_Channel+ 10 v / - 8 V3.9 nCEnhancement Nexfet
IPP072N10N3 G


MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
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Infineon 134
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AUD 1.4563
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80 A100 V6.2 mOhmsN - Channel 2 V- 55 C+ 175 C150 WThrough HoleTO - 220TubeSi1 Channel20 V68 nCEnhancement Optimos
IXFA4N100Q


MOSFET 4 Amps 1000V 2.8 Rds
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IXYS 134
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AUD 12.7425
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4 A1 kV3 Ohmsn - channel  - 55 C+ 150 C150 Wsmd/smtTO - 263Tubesi1 channel20 V enhancement hyperfet
IXFK80N60P3


MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET
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IXYS 134
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AUD 23.5925
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80 A600 V70 mOhmsN - Channel 5 V  1.3 kWThrough HoleTO - 264 - 3TubeSi1 Channel30 V190 nC  Hiperfet
HSD6016


MOSFET N Channel 60V 47A 2.5V @ 250uA 12mO @ 30A,10V TO-251 RoHS
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HUASHUO 133
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AUD 0.3587
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IXTT88N30P


MOSFET 88 Amps 300V 0.04 Rds
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IXYS 125
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AUD 22.8388
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88 A300 V40 mOhmsN - Channel 5 V- 55 C+ 150 C600 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V180 nCEnhancement Polarht
ASB65R220E


650V 20A 190m 126W 3.5V TO-263 MOSFETs ROHS
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ANHI 125
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AUD 1.1181
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NTMFS4C35NT1G


ON Semiconductor MOSFET Pwr MOSFET 30V 80A 3.2mOhm SGL N-CH
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ON Semiconductor 0
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AUD 0.4836
Multiples of: 1500

80 A30 V3.2 mOhmsn - channel     smd/smtSO - 8FLReelsi1 channel     
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