MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot SUP85N10-10-E3


MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3
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Vishay 663
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AUD 2.9224
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85 A100 V8.5 mOhmsN - Channel 1 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nCEnhancement Trenchfet
IXTQ50N20P


MOSFET 50 Amps 200V 0.06 Rds
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IXYS 178
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AUD 5.0896
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50 A200 V60 mOhmsN - Channel 5 V- 55 C+ 175 C360 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V70 nCEnhancement Polarht
IPL60R115CFD7


MOSFET HIGH POWER_NEW
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Infineon 178
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AUD 5.8652
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IPW65R065C7


Infineon Technologies MOSFET
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Infineon 178
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AUD 7.0761
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33 A650 V58 mOhmsN - Channel+/- 20 V3.5 V- 55 C+ 150 C171 WThrough HolePG - TO 247Tube-1 Channel10 V64 nCEnhancement Coolmos C7
DMG1026UV-7


MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K
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Diodes Incorporated 177
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AUD 0.211
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440 mA60 V1.8 OhmsN - Channel  - 55 C+ 150 C580 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel20 V0.45 nCEnhancement  
WSD20100DN56


20V 90A 1.6mΩ@10V,20A 83W 1V@250uA null DFN-8(5x6) MOSFETs ROHS
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Winsok 177
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AUD 0.3484
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WMP119N10LG2


Transistor: N-MOSFET; unipolar; TO251
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Wayon 177
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AUD 0.7627
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TK3A65D(STA4,Q,M)


Toshiba MOSFET N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
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Toshiba 177
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AUD 1.0843
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3 A650 V2.25 OhmsN - Channel    35 WThrough HoleTO - 220 - 3ReelSi1 Channel     
IRFS3107TRLPBF


Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
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Infineon 177
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AUD 3.6847
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230 A75 V2.5 mOhmsN - Channel    370 WSmd/SmtD2PAKReelSi1 Channel20 V160 nC   
IRFP3206PBF-JSM


TO-247 MOSFETs ROHS
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JSMSEMI 175
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AUD 1.3196
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First...19761977197819791980...

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