MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTY1R6N50D2


MOSFET N-CH MOSFETS (D2) 500V 1.6A
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IXYS 412
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AUD 3.3821
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1.6 A500 V2.3 Ohmsn - channel  - 55 C+ 150 C100 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V23.7 nC   
IPN70R750P7SATMA1


700V 6.5A 6.7W 750mO@10V,1.4A null SOT-223 MOSFETs ROHS
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Infineon 222
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AUD 1.4348
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6.5 A700 V620 mOhmsN - Channel 2.5 V- 40 C+ 150 C6.7 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel16 V8.3 nCEnhancement  
CEM4435A


30V 9A 18mO@10V,9A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 185
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AUD 0.3742
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STI24N60M2


Transistor: N-MOSFET; unipolar; 600V; 12A; 150W; I2PAK
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STMicroelectronics 183
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AUD 1.5876
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            Supermesh      
IPP60R190C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
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Infineon 183
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AUD 2.1179
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            Coolmos C6      
WMMB020N10HG4


Transistor: N-MOSFET; unipolar; TO263-7
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Wayon 183
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AUD 3.3224
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RS12N65F


650V 12A 680mΩ@10V,6A 65W null TO-220F MOSFETs ROHS
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REASUNOS 182
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AUD 0.5972
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IPA060N06NM5S


MOSFET TRENCH 40<-<100V
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Infineon 181
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AUD 1.1209
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IPG20N10S4L-22


Infineon Technologies MOSFET MOSFET
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Infineon 181
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AUD 1.1854
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20 A , 20 A100 v , 100 V20 mOhms , 20 mOhmsN - Channel 1.6 V- 55 C+ 175 C60 WSmd/SmtTDSON - 8Reel-1 Channel+/- 16 V21 nCEnhancementAec - Q101 
IRL640PBF-BE3


MOSFET 200V N-CH HEXFET
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Vishay 90
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AUD 1.6188
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17 A200 V180 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V66 nCEnhancement  
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First...19711972197319741975...

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