MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK4A60DA(STA4,Q,M)


Toshiba MOSFET N-ch 600V 3.5A TO-220SIS
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Toshiba 448
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AUD 0.9528
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3.5 A600 V1.7 OhmsN - Channel 2.4 v to 4.4 V- 55 C+ 150 C35 WSmd/SmtSC - 62 - 3TubeSi1 Channel30 V11 nCEnhancement  
AON7230


Transistor: N-MOSFET; unipolar; 100V; 30A; 21W; DFN8
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Alpha & Omega 448
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AUD 1.2704
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DMTH6004SPS-13


MOSFET 60V 175c N-Ch FET 20Vgss 21A 2.1W
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Diodes Incorporated 448
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AUD 1.3791
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   N - Channel     Smd/SmtPowerdi5060 - 8Cut TapeSi1 Channel     
IPA032N06N3GXKSA1


Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
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Infineon 448
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AUD 2.1341
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            Optimos 3      
IPP011N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 448
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AUD 2.3642
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210 A30 V1.05 mOhmsN - Channel 2.35 V- 55 C+ 175 C3.8 WThrough Hole TubeSi1 Channel- 20 V , + 20 V224 nCEnhancement StrongIRFET
TPM60V7NBS8-1


SOP8 MOSFETs ROHS
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TECH PUBLIC 447
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AUD 0.3065
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WMS175N10HG4


Transistor: N-MOSFET; unipolar; SOP8
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Wayon 447
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AUD 0.3699
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JCS640RH-O-R-N-A


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 9A,10V TO-252-2 (DPAK) RoHS
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Jilin 447
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AUD 0.9136
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SIHP065N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220AB
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Vishay 447
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AUD 12.0149
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40 A600 V57 mOhmsN - Channel 3 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3 Si1 Channel- 30 V , 30 V98 nCEnhancement  
SQJ415EP-T1_GE3


P-Channel 40 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 445
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AUD 1.379
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30 A40 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V95 nCEnhancement  
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